Korean electronics giant Samsung is doing their bit to minimize the energy consumption in their technologies. Employing a comparatively novel technology called the through-silicon vias (TSV), Sammy is now layering their memory chips densely to reduce space and energy consumption with in its new memory modules.
Meanwhile, the RDIMM – featuring 30nm process technology – is built from 4Gbit DDR3 memory. Samsung claims the chip to be 70 per cent faster than the earlier quad-rank 32GB RDIMMs, transmitting data at up to 1,333Mbit/s and has operational speeds of 800Mbit/s. It’s found that the new RDIMM saves 30 percent compared to the 32 GB load-reduced dual-inline memory modules (LRDIMM) consuming only just 4.5 watts per hour.
Usually, the stocked chips in the memory are connected via edge connectors, which in turn widen and lengthen the chips and also requires intermediate layers between the memory chip layers. The newly introduced TSV technology works by letting the stacked chip layers to communicate by means of vertical electrical signals (Vias).
Vias use the small holes within the body of chips that shorten the signal lines there by lessening the power expenditure. As it gets rid of the intermediate layers, the chips are remarkably smaller in width and length.
Sammy has acquired high chip density and greater operational speed with the TSV technology. Brand also boasts the chip to use minimal power that they claims this chip to have the lowest power consumption level among memory modules currently employed. OEMS will now get the prototypes of eco-friendly as well as Economic RDIMMs for evaluation.